Číslo součásti BF 888 H6327 Výrobce Infineon Technologies Kategorie RF Bipolar Transistors RoHS Datasheet BF 888 H6327 Popis RF Bipolar Transistors RF BIP TRANSISTOR
Výrobce Infineon Technologies Kategorie RF Bipolar Transistors Collector- Emitter Voltage VCEO Max 4 V Configuration Single Continuous Collector Current 30 mA DC Collector/Base Gain hfe Min 250 Emitter- Base Voltage VEBO 13 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-343 Packaging Cut Tape, MouseReel, Reel Series BF888 Technology SI Transistor Polarity NPN Transistor Type Bipolar Power