Číslo součásti 2SA1417S-TD-E Výrobce onsemi Kategorie Bipolar Transistors - BJT RoHS Datasheet 2SA1417S-TD-E Popis Bipolar Transistors - BJT BIP PNP 2A 100V
Výrobce onsemi Kategorie Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 0.22 V Configuration Single Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SC-62-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Series 2SA1417 Transistor Polarity PNP