Číslo součásti SQ2310ES-T1_BE3 Výrobce Vishay / Siliconix Kategorie MOSFET RoHS Datasheet SQ2310ES-T1_BE3 Popis MOSFET N-CHANNEL 20V (D-S)
Výrobce Vishay / Siliconix Kategorie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 4.5 nC Rds On - Drain-Source Resistance 24 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V