Číslo součásti SQ2319ADS-T1_GE3 Výrobce Vishay Semiconductors Kategorie MOSFET RoHS Datasheet SQ2319ADS-T1_GE3 Popis MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
Výrobce Vishay Semiconductors Kategorie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2.5 W Qg - Gate Charge 10.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 75 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V