Číslo součásti R6004PND3FRATL Výrobce ROHM Semiconductor Kategorie MOSFET RoHS Datasheet R6004PND3FRATL Popis MOSFET 600V N-CH 4A POWER
Výrobce ROHM Semiconductor Kategorie MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3/2 Packaging Cut Tape, Reel Pd - Power Dissipation 65 W Qg - Gate Charge 11 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 1.8 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4.5 V